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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1493 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed APPLICATIONS *Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 1500 V 800 V 6 V 2.5 A 5 A 50 W .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ TC= 25 PC TJ Junction Temperature 150 Tstg Storage Temperature Range -45~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1493 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current VCB= 600V; IE= 0 w w scs .i w .cn mi e 10 A isc Websitewww.iscsemi.cn 2 |
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